cmd201_ver_1_1_1214

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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294

Visit us online at www.custommmic.com

CMD201CMD201CMD201DC-20 GHz Distributed Power Amplifier

The CMD201 is wideband GaAs MMIC dis-tributed power amplifier die which operatesfrom DC to 20 GHz. The amplifier deliversgreater than 12 dB of gain with a correspond-ing output 1 dB compression point of +29 dBmand output IP3 of 38 dBm at 10 GHz. TheCMD201 is a 50 ohm matched design whicheliminates the need for RF port matching. TheCMD201 offers full passivation for increasedreliability and moisture protection.

Microwave radio and VSAT Telecom infrastructure Test instrumentation Military and space Fiber optics

Ultra wideband performance High linearity High output power Excellent return losses Small die size

Electrical Performance - V dd = 10.0 V, V gg1 = -0.55 V, V gg2 = 5.0 V , T A = 25 oC, F = 10 GHz

Features Applications

Description Functional Block Diagram

ver 1.1 1214

Parameter Min Typ Max Units

Frequency Range GHz

Gain 12 dB

Noise Figure 3.4 dBInput Return Loss 16 dB

Output Return Loss 17 dB

Output P1dB 29 dBm

Supply Current 400 mA

DC - 20

Let Performance Drive

1

3 4

5

678

2

RFIN

RFOUT&Vdd

ACG1 ACG2

ACG4 ACG3

Vgg2

Vgg1

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Typical Performance

Broadband Performance, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, I dd = 400 mA, T A = 25 oC

Narrow-band Performance, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, I dd = 400 mA, T=25 oC

CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier

-20

-15

-10

-5

0

5

10

15

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Frequency/GHz

R e s p o n s e

/ d B

0

1

2

3

4

5

6

7

N o i s e

F i g u r e

/ d B

S11

S22

S21

NF

-20

-15

-10

-5

0

5

10

15

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

R e s p o n s e

/ d B

0

1

2

3

4

5

6

7

N o

i s e

F i g u r e

/ d B

S11

S22

S21

NF

ver 1.1 1214

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Gain vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V

Typical Performance

Noise Figure vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V

ver 1.1 1214


0

1

2

3

4

5

6

7

8

9

10

3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

N o i s e

F i g u r e

/ d B

+25C

+85C

-55C

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

G a i n

/ d B

+25C

+85C

-55C

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Output Power, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, T A = 25 oC

Typical Performance

ver 1.1 1214

P1dB vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V


15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

R e s p o n s e

/ d B m

P1dB

Psat

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

P 1 d B / d B m

+25C

+85C

-55C

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Output IP3 vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V

Typical Performance

ver 1.1 1214


10

15

20

25

30

35

40

45

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

O u

t p u t I P 3 / d B m

+25C

+85C

-55C

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ver 1.1 1214

Die Outline (all dimensions in microns)

Notes:1. No connection required for unlabeled pads2. Backside is RF and DC ground3. Backside and bond pad metal: Gold4. Die is 85 microns thick5. DC bond pads are 100 microns square

Mechanical Information


1

3 4

5

678

1781.00

2058.50

2185.50

2820.00

2

411.00

728.00

1384.00

1550.00

114.00

247.00

162.00

863.00

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Pad Diagram

Functional Description

Pad Description

ver 1.1 1214


Pad Function Description Schematic

1 RF in 50 ohm matched input

2 Vgg2Power supply voltage

Decoupling and bypass caps required

3, 4 ACG1, 2 Low frequency termination. Attach bypasscapacitor per application circuit

5 RF out &VddPower supply voltage and 50 ohm matched

output

6, 7 ACG3, 4 Low frequency termination. Attach bypasscapacitor per application circuit

8 Vgg1 Power supply voltageDecoupling and bypass caps required

Backside Ground Connect to RF / DC groundGND

Vgg2

RF in

RF in

ACG3

ACG4

RF out & Vdd

ACG1

ACG2

1

3 4

5

678

2

Vgg1

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Assembly Guidelines

Assembly Diagram

ver 1.1 1214

Applications Information

The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically andthermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly proceduresshould be followed for high frequency devices. The top surface of the semiconductor should be made

planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximityto the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Useof a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.The RF input and output require a double bond wire as shown.

The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handlewith care.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautionsshould be observed during handling, assembly and test.


0.1 uF CAP TO GROUND

To Vgg1

0.1 uF CAP TO GROUND

100 pF CAP TO GROUND100 pF BYPASS CAP

0.1 uF BYPASS CAP

100 pF CAP TO GROUND

0.1 uF BYPASS CAP

100 pF BYPASS CAP

To Vgg2

To Vdd

RF out

RF in

(example: Presidio partMVB4080X104ZGK5R3L)

(example: Presidio partLSA1515B101M2H5R-L)

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ver 1.1 1214

Applications Information

Application Circuit

The CMD201 is biased with a positive drain supply, a negative gate1 supply and a positive gate2 supply.Performance is optimized when the drain voltage is set to +10 V. The recommended gate1 and gate2voltages are -0.55 V and +5 V respectively.

Turn ON procedure:

1.Apply gate voltage V gg1 and set to -0.55 V2.Apply drain voltage V dd and set to +10 V

3.Apply gate voltage V gg2 and set to +5V

Turn OFF procedure:

1.Turn off gate voltage V gg2 2.Turn off drain voltage V dd 3.Turn off gate voltage V gg1


Biasing and Operation

Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.External DC block is required on RF input.

1

3

4

7

8

RF in

Vgg1

0.1 uF

100 pF

0.1 uF 100 pF

5

Vdd

RF out

Vgg20.1 uF 100 pF

2

100 pF

6

0.1 uF

cmd201_ver_1_1_1214

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