A-3.24.2 ELECTRONICA II Amplificadores de Potencia

Facultad de Ciencias Exactas, Ingeniera y Agrimensura - UNR Ingeniera Electrnica

Compendio de Hojas de Datos:

Transistores de potencia Para uso interno de la materia Electrnica II

Indice: 2SC4793 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) MJE170/171/172 (PNP), MJE180/181/182 (NPN) TIP31 A/B/C (NPN), TIP32 A/B/C (PNP) 2N5190/191/192 2SD1135 BD675/A, 677/A, 679/A, 681 2SC3074 TIP120/21/22 (NPN), TIP125/26/27 (PNP) BD243B/C, 244B/C MJE2955T (PNP), MJE3055T (NPN) 2N3442 2N3715/16 2N5875/76 (PNP), 2N5877/78 (NPN) 2SC5199 2N5879/80 (PNP), 2N5881/82 (NPN) 2N3055A, MJ15015 (NPN), MJ15016 (PNP) MJL3281A (NPN), MJL1302A (PNP)

2SC4793

2004-07-26 1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 230 V

Collector-emitter voltage VCEO 230 V

Emitter-base voltage VEBO 5 V

Collector current IC 1 A

Base current IB 0.1 A

Ta = 25C 2.0 Collector power dissipation Tc = 25C

PC 20

W

Junction temperature Tj 150 C

Storage temperature range Tstg 55 to 150 C

Electrical Characteristics (Tc = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 230 V, IE = 0 1.0 A

Emitter cut-off current IEBO VEB = 5 V, IC = 0 1.0 A

Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 230 V

DC current gain hFE VCE = 5 V, IC = 100 mA 100 320

Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 1.5 V

Base-emitter voltage VBE VCE = 5 V, IC = 500 mA 1.0 V

Transition frequency fT VCE = 10 V, IC = 100 mA 100 MHz

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 20 pF

Marking

Unit: mm

JEDEC

JEITA

TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

C4793

Part No. (or abbreviation code)

Semiconductor Components Industries, LLC, 2005

September, 2005 Rev. 81 Publication Order Number:

TIP29B/D

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)

Complementary SiliconPlastic Power Transistors

Designed for use in general purpose amplifier and switchingapplications. Compact TO220 AB package.

Features

PbFree Packages are Available*

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

TO220ABCASE 221A

STYLE 1

MARKINGDIAGRAM

1 AMPEREPOWER TRANSISTORS

COMPLEMENTARY SILICON40, 60, 80, 100 VOLTS,

80 WATTS

http://onsemi.com

12

3

4

TIPxxx = Device Code:29, 29A, 29B, 29C30, 30A, 30B, 30C

A = Assembly LocationY = YearWW = Work WeekG = PbFree Package

TIPxxxGAYWW

See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.

ORDERING INFORMATION

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

http://onsemi.com2

MAXIMUM RATINGSRating

Symbol

TIP29TIP30

TIP29ATIP30A

TIP29BTIP30B

TIP29CTIP30CUnit

Collector Emitter VoltageVCEO

40

60

80

100

Vdc

Collector Base Voltage

VCB

40

60

80

100

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current Continuous Peak

IC

1.03.0

Adc

Base Current

IB

0.4

Adc

Total Power Dissipation@ TC = 25CDerate above 25C

PD

300.24

WW/C

Total Power Dissipation@ TA = 25CDerate above 25C

PD

2.00.016

WW/C

Unclamped Inductive Load Energy (Note 1)

E

32

mJ

Operating and Storage Junction Temperature Range

TJ, Tstg

65 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, JunctiontoAmbient

RJA

62.5

C/W

Thermal Resistance, JunctiontoCase

RJC

4.167

C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1. This rating based on testing with LC = 20 mH, RBE = 100 , VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz

ORDERING INFORMATION

Device Package Shipping

TIP29 TO220 50 Units / Rail

TIP29G TO220(PbFree)

50 Units / Rail

TIP29A TO220 50 Units / Rail

TIP29AG TO220(PbFree)

50 Units / Rail

TIP29B TO220 50 Units / Rail

TIP29BG TO220(PbFree)

50 Units / Rail

TIP29C TO220 50 Units / Rail

TIP29CG TO220(PbFree)

50 Units / Rail

TIP30 TO220 50 Units / Rail

TIP30G TO220(PbFree)

50 Units / Rail

TIP30A TO220 50 Units / Rail

TIP30AG TO220(PbFree)

50 Units / Rail

TIP30B TO220 50 Units / Rail

TIP30BG TO220(PbFree)

50 Units / Rail

TIP30C TO220 50 Units / Rail

TIP30CG TO220(PbFree)

50 Units / Rail

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)TIP29, TIP30

TIP29A, TIP30ATIP29B, TIP30BTIP29C, TIP30C

VCEO(sus)

406080

100

Vdc

Collector Cutoff Current(VCE = 30 Vdc, IB = 0) TIP29, TIP29A, TIP30, TIP30A(VCE = 60 Vdc, IB = 0) TIP29B, TIP29C, TIP30B, TIP30C

ICEO

0.30.3

mAdc

Collector Cutoff Current(VCE = 40 Vdc, VEB = 0) TIP29, TIP30(VCE = 60 Vdc, VEB = 0) TIP29A, TIP30A(VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B(VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C

ICES

200200200200

Adc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

hFE

4015

75

CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

VCE(sat)

0.7

Vdc

BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.3

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (Note 3)(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

SmallSignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%3. fT = hfe ftest

Semiconductor Components Industries, LLC, 2006

January, 2006 Rev. 91 Publication Order Number:

MJE171/D

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)

Preferred Device

Complementary PlasticSilicon Power Transistors

The MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.

Features

CollectorEmitter Sustaining Voltage VCEO(sus) = 40 Vdc MJE170, MJE180

= 60 Vdc MJE171, MJE181= 80 Vdc MJE172, MJE182

DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc

= 12 (Min) @ IC = 1.5 Adc CurrentGain Bandwidth Product

fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages

ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V0 @ 0.125 in ESD Ratings: Machine Model, C

Human Body Model, 3B PbFree Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorBase VoltageMJE170, MJE180MJE171, MJE181MJE172, MJE182

VCB

6080

100

Vdc

CollectorEmitter VoltageMJE170, MJE180MJE171, MJE181MJE172, MJE182

VCEO

406080

Vdc

EmitterBase Voltage

VEB

7.0

Vdc

Collector Current Continuous Peak

IC

3.06.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25CDerate above 25C

PD

1.50.012

WW/C

Total Power Dissipation @ TA = 25CDerate above 25C

PD

12.50.1

WW/C

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to +150

C

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normaloperating conditions) and are not valid simultaneously. If these limits are exceeded,device functional operation is not implied, damage may occur and reliability may beaffected.

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

TO225AACASE 7709

STYLE 1

3 AMPERESPOWER TRANSISTORS

COMPLEMENTARY SILICON40 60 80 VOLTS

12.5 WATTS

3 2 1

Preferred devices are recommended choices for future useand best overall value.

See detailed ordering and shipping information in the packagedimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

YWWJE1xxG

Y = YearWW = Work WeekJE1xx = Specific Device Code

x = 70, 71, 72, 80, 81, or 82G = PbFree Package

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase JC 10 C/W

Thermal Resistance, JunctiontoAmbient JA 83.4 C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage MJE170, MJE180(IC = 10 mAdc, IB = 0) MJE171, MJE181

MJE172, MJE182

VCEO(sus)

406080

Vdc

Collector Cutoff Current(VCB = 60 Vdc, IE = 0) MJE170, MJE180(VCB = 80 Vdc, IE = 0) MJE171, MJE181(VCB = 100 Vdc, IE = 0) MJE172, MJE182(VCB = 60 Vdc, IE = 0, TC = 150C) MJE170, MJE180(VCB = 80 Vdc, IE = 0, TC = 150C) MJE171, MJE181(VCB = 100 Vdc, IE = 0, TC = 150C) MJE172, MJE182

ICBO

0.10.10.1

0.10.1

Adc

mAdc

Emitter Cutoff Current(VBE = 7.0 Vdc, IC = 0)

IEBO

0.1

Adc

ON CHARACTERISTICS

DC Current Gain(IC = 100 mAdc, VCE = 1.0 Vdc)(IC = 500 mAdc, VCE = 1.0 Vdc)(IC = 1.5 Adc, VCE = 1.0 Vdc)

hFE

503012

250

CollectorEmitter Saturation Voltage(IC = 500 mAdc, IB = 50 mAdc)(IC = 1.5 Adc, IB = 150 mAdc)(IC = 3.0 Adc, IB = 600 mAdc)

VCE(sat)

0.30.91.7

Vdc

BaseEmitter Saturation Voltage(IC = 1.5 Adc, IB = 150 mAdc)(IC = 3.0 Adc, IB = 600 mAdc)

VBE(sat)

1.52.0

Vdc

BaseEmitter On Voltage(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

1.2

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (Note 1)(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

50

MHz

Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172

MJE181/MJE182

Cob

6040

pF

1. fT = hfe ftest.

Semiconductor Components Industries, LLC, 2005

September, 2005 Rev. 101 Publication Order Number:

TIP31A/D

TIP31, TIP31A, TIP31B, TIP31C,(NPN), TIP32, TIP32A, TIP32B,TIP32C, (PNP)

Complementary SiliconPlastic Power Transistors

Designed for use in general purpose amplifier and switchingapplications.

Features CollectorEmitter Saturation Voltage

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc CollectorEmitter Sustaining Voltage

VCEO(sus) = 40 Vdc (Min) TIP31, TIP32= 60 Vdc (Min) TIP31A, TIP32A= 80 Vdc (Min) TIP31B, TIP32B= 100 Vdc (Min) TIP31C, TIP32C

High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TO220 AB Package PbFree Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector Emitter Voltage TIP31, TIP32TIP31A, TIP32ATIP31B, TIP32BTIP31C, TIP32C

VCEO

406080

100

Vdc

CollectorBase Voltage TIP31, TIP32TIP31A, TIP32ATIP31B, TIP32BTIP31C, TIP32C

VCB

406080

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current ContinuousPeak

IC

3.05.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation@ TC = 25CDerate above 25C

PD

400.32

WW/C

Total Power Dissipation@ TA = 25CDerate above 25C

PD

2.00.016

WW/C

Unclamped Inductive Load Energy (Note 1)

E

32

mJ

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to+150

C

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

TO220ABCASE 221A

STYLE 1

MARKINGDIAGRAM

3 AMPEREPOWER TRANSISTORS

COMPLEMENTARY SILICON406080100 VOLTS,

40 WATTS

http://onsemi.com

12

3

4

TIP3xx = Device Codexx = 1, 1A, 1B, 1C,

2, 2A, 2B, 2C,A = Assembly LocationY = YearWW = Work WeekG PbFree Package

TIP3xxGAYWW

See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.

ORDERING INFORMATION

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

http://onsemi.com2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, JunctiontoAmbient

RJA

62.5

C/W

Thermal Resistance, JunctiontoCase

RJC

3.125

C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32(IC = 30 mAdc, IB = 0) TIP31A, TIP32A

TIP31B, TIP32BTIP31C, TIP32C

VCEO(sus)

406080

100

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A

ICEO

0.3

mAdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C

0.3

Collector Cutoff Current(VCE = 40 Vdc, VEB = 0) TIP31, TIP32(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C

ICES

200200200200

Adc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

2510

50

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat)

1.2

Vdc

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHzSmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

ORDERING INFORMATION

Device Package Shipping

TIP31 TO220 50 Units / Rail

TIP31G TO220(PbFree)

50 Units / Rail

TIP31A TO220 50 Units / Rail

TIP31AG TO220(PbFree)

50 Units / Rail

TIP31B TO220 50 Units / Rail

TIP31BG TO220(PbFree)

50 Units / Rail

TIP31C TO220 50 Units / Rail

TIP31CG TO220(PbFree)

50 Units / Rail

TIP32 TO220 50 Units / Rail

TIP32G TO220(PbFree)

50 Units / Rail

TIP32A TO220 50 Units / Rail

TIP32AG TO220(PbFree)

50 Units / Rail

TIP32B TO220 50 Units / Rail

TIP32BG TO220(PbFree)

50 Units / Rail

TIP32C TO220 50 Units / Rail

TIP32CG TO220(PbFree)

50 Units / Rail

Semiconductor Components Industries, LLC, 2006March, 2006 Rev. 12

1 Publication Order Number:2N5191/D

2N5190, 2N5191, 2N5192

Silicon NPN PowerTransistors

Silicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.

Features

ESD Ratings: Machine Model, C; > 400 VHuman Body Model, 3B; > 8000 V

Epoxy Meets UL 94 V0 @ 0.125 in. PbFree Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

CollectorEmitter Voltage 2N51902N51912N5192

VCEO 406080

Vdc

CollectorBase Voltage 2N51902N51912N5192

VCBO 406080

Vdc

EmitterBase Voltage VEBO 5.0 Vdc

Collector Current IC 4.0 Adc

Base Current IB 1.0 Adc

Total Device Dissipation @ TC = 25CDerate above 25C

PD 40320

WmW/C

Operating and Storage JunctionTemperature Range

TJ, Tstg 65 to +150 C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase RJC 3.12 C/W

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

2N5190 TO225AA 500 Units/Box

4.0 AMPERESNPN SILICON

POWER TRANSISTORS40, 60, 80 VOLTS 40 WATTS

Y = YearWW = Work Week2N519x = Device Code

x = 0, 1, or 2G = PbFree Package

2N5191G TO225AA(PbFree)

500 Units/Box

2N5192 TO225AA 500 Units/Box

TO225AACASE 77STYLE 1

MARKING DIAGRAM

YWW2N519xG

3 2 1

2N5191 TO225AA 500 Units/Box

ORDERING INFORMATION

For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

2N5192G TO225AA(PbFree)

500 Units/Box

2N5190G TO225AA(PbFree)

500 Units/Box

2N5190, 2N5191, 2N5192

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ELECTRICAL CHARACTERISTICS* (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 1)(IC = 0.1 Adc, IB = 0) 2N5190

2N51912N5192

VCEO(sus)406080

Vdc

Collector Cutoff Current(VCE = 40 Vdc, IB = 0) 2N5190(VCE = 60 Vdc, IB = 0) 2N5191(VCE = 80 Vdc, IB = 0) 2N5192

ICEO

1.01.01.0

mAdc

Collector Cutoff Current(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5190(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5191(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5192

ICEX

0.10.10.12.02.02.0

mAdc

Collector Cutoff Current(VCB = 40 Vdc, IE = 0) 2N5190(VCB = 60 Vdc, IE = 0) 2N5191(VCB = 80 Vdc, IE = 0) 2N5192

ICBO

0.10.10.1

mAdc

Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

IEBO 1.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

2N5192(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

2N5192

hFE2520107.0

10080

CollectorEmitter Saturation Voltage(IC = 1.5 Adc, IB = 0.15 Adc)(IC = 4.0 Adc, IB = 1.0 Adc)

VCE(sat)

0.61.4

Vdc

BaseEmitter On Voltage(IC = 1.5 Adc, VCE = 2.0 Vdc)

VBE(on) 1.2 Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT 2.0 MHz

*JEDEC Registered Data.1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

2SD1135

Silicon NPN Triple Diffused

ADE-208-906 (Z)1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SB859

Outline

1. Base2. Collector (Flange)3. Emitter

TO-220AB

12 3

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 100 V

Collector to emitter voltage VCEO 80 V

Emitter to base voltage VEBO 5 V

Collector current IC 4 A

Collector peak current IC(peak) 8 A

Collector power dissipation PC*1 40 W

Junction temperature Tj 150 C

Storage temperature Tstg 45 to +150 C

Note: 1. Value at TC = 25C.

2SD1135

2

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdownvoltage

V(BR)CEO 80 V IC = 50 mA, RBE =

Emitter to base breakdownvoltage

V(BR)EBO 5 V IE = 10 A, IC = 0

Collector cutoff current ICBO 0.1 mA VCB = 80 V, IE = 0

DC current transfer ratio hFE1*1 60 200 VCE = 5 V, IC = 1 A*

2

hFE2 35 VCE = 5 V, IC = 0.1 A*2

Base to emitter voltage VBE 1.5 V VCE = 5 V, IC = 1 A*2

Collector to emitter saturationvoltage

VCE(sat) 2 V IC = 2 A, IB = 0.2 A*2

Gain bandwidth product fT 10 MHz VCE = 5 V, IC = 0.5 A*2

Collector output capacitance Cob 40 pF VCB = 20 V, IE = 0, f = 1 MHz

Notes: 1. The 2SD1135 is grouped by hFE1 as follows.2. Pulse test.

B C

60 to 120 100 to 200

0 50 100 150Case temperature TC (C)

Col

lect

or p

ower

dis

sipa

tion

Pc

(W

)

Maximum Collector Dissipation Curve

20

40

60

0.05

0.1

0.2

0.5

1.0

2

5

Collector to emitter voltage VCE (V)

Col

lect

or c

urre

nt I

C (

A)

1 2 5 10 20 50 100

Area of Safe Operation

IC max (Continuous)(10 V, 4 A)

(33 V, 1.2 A)

(80 V, 0.06 A)

DC Operation

(TC = 25C)

1Motorola Bipolar Power Transistor Device Data

! "# ! . . . for use as output devices in complementary generalpurpose amplifier applica-tions.

High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

Monolithic Construction BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,

678, 678A, 680, 680A, 682 BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

MAXIMUM RATINGS

Rating

Symbol

BD675BD675A

BD677BD677A

BD679BD679A

BD681

Unit

CollectorEmitter Voltage

VCEO

45

60

80

100

Vdc

CollectorBase Voltage

VCB

45

60

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current

IC

4.0

Adc

Base Current

IB

0.1

Adc

Total Device Dissipation@TC = 25CDerate above 25C

PD

400.32

WattsW/C

Operating and Storage JunctionTemperating Range

TJ, Tstg

55 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

JC

3.13

C/W

50

40

10

5.0

015 30 45 60 75 105 135 150 165

Figure 1. Power Temperature Derating

TC, CASE TEMPERATURE (C)

P D, P

OW

ER D

ISSI

PATI

ON

(WAT

TS)

12090

45

20

15

30

25

35

Preferred devices are Motorola recommended choices for future use and best overall value.

SEMICONDUCTOR TECHNICAL DATA

Order this documentby BD675/D

Motorola, Inc. 1995

4.0 AMPEREDARLINGTON

POWER TRANSISTORSNPN SILICON

60, 80, 100 VOLTS40 WATTS

*Motorola Preferred Device

CASE 7708TO225AA TYPE

REV 7

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Breakdown Voltage(1) BD675, 675A(IC = 50 mAdc, IB = 0) BD677, 677A

BD679, 679ABD681

BVCEO

456080100

Vdc

Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ICEO

500

Adc

Collector Cutoff Current(VCB = Rated BVCEO, IE = 0)(VCB = Rated BVCEO, IE = 0, TC = 100C)

ICBO

0.22.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

2.0

mAdc

ON CHARACTERISTICS

DC Currert Gain(1)

(IC = 1.5 Adc,VCE = 3.0 Vdc) BD675, 677, 679, 681(IC = 2.0 Adc, VCE = 3.0 Vdc) BD675A, 677A, 679A

hFE

750750

CollectorEmitter Saturation Voltage(1)

(IC = 1.5 Adc, IB = 30 mAdc) BD677, 679, 681(IC = 2.0 Adc, IB = 40 mAdc) BD675A, 677A, 679A

VCE(sat)

2.52.8

Vdc

BaseEmitter On Voltage(1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) BD677, 679, 681(IC = 2.0 Adc, VCE = 3 0 Vdc) BD675A, 677A, 679A

VBE(on)

2.52.5

Vdc

DYNAMIC CHARACTERISTICS

Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

hfe

1.0

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Figure 2. DC Safe Operating Area

5.0

1.0

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

2.0

1.0

0.5

0.052.0 5.0 10 50 100

BONDING WIRE LIMITTHERMALLY LIMIT at TC = 25CSECONDARY BREAKDOWN LIMIT

0.2

0.1I C, C

OLL

ECTO

R C

UR

REN

T (A

MP)

TC = 25CBD675, 675ABD677, 677ABD679, 679A

BD681

20

There are two limitations on the power handling ability of atransistor average junction temperature and secondarybreakdown. Safe operating area curves indicate IC VCE lim-its of the transistor that must be observed for reliable opera-tion; e.g., the transistor must not be subjected to greaterdissipation than the curves indicate.

At high case temperatures, thermal limitations will reducethe power that can be handled to values less than the limita-tions imposed by secondary breakdown.

Figure 3. Darlington Circuit Schematic

BASE

NPNBD675, 675ABD677, 677ABD679, 679A

BD681

COLLECTOR

EMITTER

8.0 k 120

2SC3074

2002-07-23 1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3074 High Current Switching Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ) Complementary to 2SA1244 Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 60 V

Collector-emitter voltage VCEO 50 V

Emitter-base voltage VEBO 5 V

Collector current IC 5 A

Base current IB 1 A

Ta = 25C 1.0 Collector power dissipation Tc = 25C

PC 20

W

Junction temperature Tj 150 C

Storage temperature range Tstg 55 to 150 C

Unit: mm

JEDEC

JEITA

TOSHIBA 2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

2SC3074

2002-07-23 2

Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 50 V, IE = 0 1 A

Emitter cut-off current IEBO VEB = 5 V, IC = 0 1 A

Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 V

hFE (1) (Note)

VCE = 1 V, IC = 1 A 70 240DC current gain

hFE (2) VCE = 1 V, IC = 3 A 30

Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A 0.2 0.4 V

Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A 0.9 1.2 V

Transition frequency fT VCE = 4 V, IC = 1 A 120 MHz

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 80 pF

Turn-on time ton 0.1

Storage time tstg 1.0 Switching time

Fall time tf

IB1 = IB2 = 0.15 A, DUTY CYCLE 1%

0.1

s

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture

20 s

INPUT

IB1

IB2

OUTPUT

VCC = 30 V

I B1

10

IB2

C3074 Product No.

Lot No.

hFE Classification

Semiconductor Components Industries, LLC, 2005

September, 2005 Rev. 61 Publication Order Number:

TIP120/D

TIP120, TIP121, TIP122(NPN); TIP125, TIP126,TIP127 (PNP)

Preferred Devices

Plastic MediumPowerComplementary SiliconTransistors

Designed for generalpurpose amplifier and lowspeed switchingapplications.

Features

High DC Current Gain hFE = 2500 (Typ) @ IC

= 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127

Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

= 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors PbFree Packages are Available*

*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

TO220ABCASE 221A

STYLE 1

Preferred devices are recommended choices for future useand best overall value.

MARKINGDIAGRAM

DARLINGTON5 AMPERE

COMPLEMENTARY SILICONPOWER TRANSISTORS

6080100 VOLTS, 65 WATTS

http://onsemi.com

12

3

4

TIP12x = Device Codex = 0, 1, 2, 5, 6, or 7A = Assembly LocationY = YearWW = Work WeekG = PbFree Package

TIP12xGAYWW

See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.

ORDERING INFORMATION

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

http://onsemi.com2

MAXIMUM RATINGS

Rating

Symbol

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127Unit

CollectorEmitter VoltageVCEO

60

80

100

Vdc

CollectorBase VoltageVCB

60

80

100

Vdc

EmitterBase VoltageVEB

5.0

Vdc

Collector Current Continuous Peak

IC

5.08.0

Adc

Base Current

IB

120

mAdc

Total Power Dissipation @ TC = 25CDerate above 25C

PD

650.52

WW/C

Total Power Dissipation @ TA = 25CDerate above 25C

PD

2.00.016

WW/C

Unclamped Inductive Load Energy (Note 1)E

50

mJ

Operating and Storage Junction, Temperature RangeTJ, Tstg

65 to +150

C

THERMAL CHARACTERISTICSCharacteristic

Symbol

Max

Unit

Thermal Resistance, JunctiontoCaseRJC

1.92

C/W

Thermal Resistance, JunctiontoAmbientRJA

62.5

C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100

ORDERING INFORMATION

Device Package Shipping

TIP120 TO220 50 Units / Rail

TIP120G TO220(PbFree)

50 Units / Rail

TIP121 TO220 50 Units / Rail

TIP121G TO220(PbFree)

50 Units / Rail

TIP122 TO220 50 Units / Rail

TIP122G TO220(PbFree)

50 Units / Rail

TIP125 TO220 50 Units / Rail

TIP125G TO220(PbFree)

50 Units / Rail

TIP126 TO220 50 Units / Rail

TIP126G TO220(PbFree)

50 Units / Rail

TIP127 TO220 50 Units / Rail

TIP127G TO220(PbFree)

50 Units / Rail

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

http://onsemi.com3

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2)(IC = 100 mAdc, IB = 0) TIP120, TIP125

TIP121, TIP126TIP122, TIP127

VCEO(sus)

6080

100

Vdc

Collector Cutoff Current(VCE = 30 Vdc, IB = 0) TIP120, TIP125(VCE = 40 Vdc, IB = 0) TIP121, TIP126(VCE = 50 Vdc, IB = 0) TIP122, TIP127

ICEO

0.50.50.5

mAdc

Collector Cutoff Current(VCB = 60 Vdc, IE = 0) TIP120, TIP125(VCB = 80 Vdc, IE = 0) TIP121, TIP126(VCB = 100 Vdc, IE = 0) TIP122, TIP127

ICBO

0.20.20.2

mAdc

Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

IEBO

2.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain(IC = 0.5 Adc, VCE = 3.0 Vdc)(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

10001000

CollectorEmitter Saturation Voltage(IC = 3.0 Adc, IB = 12 mAdc)(IC = 5.0 Adc, IB = 20 mAdc)

VCE(sat)

2.04.0

Vdc

BaseEmitter On Voltage(IC = 3.0 Adc, VCE = 3.0 Vdc)

VBE(on)

2.5

Vdc

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

Cob

300200

pF

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%

80

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (C)

PD

, P

OW

ER

DIS

SIP

AT

ION

(W

AT

TS

)

40

20

60

140

TC

4.0

0

2.0

1.0

3.0

TA

TA

TC

Complementary Silicon PlasticPower Transistors

. . . designed for use in general purpose amplifier and switchingapplications.

Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD243B, BD244B

= 100 Vdc (Min) BD243C, BD244C High Current Gain Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO220 AB Package

MAXIMUM RATINGS

Rating

Symbol

BD243BBD244B

BD243CBD244C

Unit

CollectorEmitter Voltage

VCEO

80

100

Vdc

CollectorBase Voltage

VCB

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current ContinuousPeak

IC

610

Adc

Base Current

IB

2.0

Adc

Total Device Dissipation@ TC = 25CDerate above 25C

PD

650.52

Watts

W/C

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RJC

1.92

C/W

80

60

40

20

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (C)

PD

, PO

WE

R D

ISS

IPA

TIO

N (

WA

TT

S)

ON Semiconductor

Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 10

1 Publication Order Number:BD243B/D

BD243B

BD243C

BD244B

BD244C

6 AMPEREPOWER TRANSISTORS

COMPLEMENTARYSILICON

80100 VOLTS65 WATTS

*ON Semiconductor Preferred Device

CASE 221A06TO220AB

NPN

PNP

*

*

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER

4. COLLECTOR1

23

4

BD243B BD243C BD244B BD244C

http://onsemi.com2

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

CollectorEmitter Sustaining Voltage (1)(IC = 30 mAdc IB = 0) BD243B BD244B

VCEO(sus)80

Vdc

(IC = 30 mAdc, IB = 0) BD243B, BD244BBD243C, BD244C

80100

Collector Cutoff Current(VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C

ICEO

0.7

mAdc

Collector Cutoff Current(VCE = 80 Vdc, VEB = 0) BD243B, BD244B(VCE = 100 Vdc, VEB = 0) BD243C, BD244C

ICES

400400

Adc

Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain(IC = 0.3 Adc, VCE = 4.0 Vdc)(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

3015

CollectorEmitter Saturation Voltage(IC = 6.0 Adc, IB = 1.0 Adc)

VCE(sat)

1.5

Vdc

BaseEmitter On Voltage(IC = 6.0 Adc, VCE = 4.0 Vdc)

VBE(on)

2.0

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (2)(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

SmallSignal Current Gain(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

(1) Pulse Test: Pulsewidth 300 s, Duty Cycle 2.0%.(2) fT = hfe ftest

Figure 2. Switching Time Test Circuit

2.0

0.06

Figure 3. TurnOn Time

IC, COLLECTOR CURRENT (AMP)

t, T

IME

(

s)

1.0

0.7

0.5

0.3

0.1

0.07

0.020.1 0.2 0.4 0.6 2.0 6.0

td @ VBE(off) = 5.0 V

TJ = 25CVCC = 30 V

IC/IB = 10+ 11 V

0

VCC 30 V

SCOPE

RB

4 V

tr, tf 10 ns

DUTY CYCLE = 1.0%

RC

tr

0.03

0.05

1.0 4.0

D1 MUST BE FAST RECOVERY TYPE eg.

1N5825 USED ABOVE IB 100 mA

MSD6100 USED BELOW IB 100 mA

25 s

9.0 VD151

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.2

Complementary Silicon PlasticPower Transistors

. . . designed for use in generalpurpose amplifier and switchingapplications.

DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product

fT = 2.0 MHz (Min) @ IC = 500 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

60

Vdc

CollectorBase Voltage

VCB

70

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Power Dissipation @ TC = 25CDerate above 25C

MJE3055T, MJE2955T

PD

75

0.6

Watts

W/C

Operating and Storage JunctionTemperature Range

TJ, Tstg

55 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

JC

1.67

C/W

Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

10

5.0

Figure 1. ActiveRegion Safe Operating Area

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.2

0.120 30

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25C (D = 0.1)

I C, C

OLL

EC

TO

R C

UR

RE

NT

(AM

P)

dc

7.0 10

5.0 ms 1.0ms

50 60

0.5

7.0

3.0

0.7

0.3

TJ = 150C

100sThere are two limitations on the power handling ability of

a transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150C. TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitationswill reduce the power that can be handled to values less thanthe limitations imposed by second breakdown. (SeeAN415A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 4

1 Publication Order Number:MJE2955T/D

MJE2955T

MJE3055T

10 AMPERECOMPLEMENTARY

SILICONPOWER TRANSISTORS

60 VOLTS75 WATTS

*ON Semiconductor Preferred Device

*PNP

NPN*

CASE 221A09TO220AB

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER

4. COLLECTOR1

23

4

MJE2955T MJE3055T

http://onsemi.com2

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)

VCEO(sus)

60

VdcCollector Cutoff Current (VCE = 30 Vdc, IB = 0)

ICEO

700

Adc

Collector Cutoff Current(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)

ICEX

1.05.0

mAdc

Collector Cutoff Current(VCB = 70 Vdc, IE = 0)(VCB = 70 Vdc, IE = 0, TC = 150C)

ICBO

1.010

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain (1)(IC = 4.0 Adc, VCE = 4 0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

205.0

100

CollectorEmitter Saturation Voltage (1)(IC = 4.0 Adc, IB = 0.4 Adc)(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

1.18.0

Vdc

BaseEmitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

CurrentGainBandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

fT

2.0

MHz

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 20%.

High-Power IndustrialTransistors

NPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.

Collector Emitter Sustaining Voltage VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability

*MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

140

Vdc

CollectorBase Voltage

VCB

160

Vdc

EmitterBase Voltage

VEB

7.0

Vdc

Collector Current ContinuousCollector Current Peak

IC

1015**

Adc

Base Current ContinuousPeak

IB

7.0

Adc

Total Power Dissipation @ TC = 25CDerate above 25C

PD

1170.67

WattsW/C

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to +200

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RJC

1.5

C/W

* Indicates JEDEC Registered Data.** This data guaranteed in addition to JEDEC registered data.

ON Semiconductor

Semiconductor Components Industries, LLC, 2001March, 2001 Rev. 10

1 Publication Order Number:2N3442/D

2N3442

10 AMPEREPOWER TRANSISTOR

NPN SILICON140 VOLTS117 WATTS

CASE 107TO204AA

(TO3)

2N3442

http://onsemi.com2

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage(IC = 200 mAdc, IB = 0)

VCEO(sus)

140

Vdc

Collector Cutoff Current(VCE = 140 Vdc, IB = 0)

ICEO

200

mAdc

Collector Cutoff Current(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

ICEX

5.030

mAdc

Emitter Cutoff Current(VBE = 7.0 Vdc, IC = 0)

IEBO

5.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain(IC = 3.0 Adc, VCE = 4.0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

207.5

70

CollectorEmitter Saturation Voltage(IC = 10 Adc, IB = 2.0 Adc)

VCE(sat)

5.0

Vdc

BaseEmitter On Voltage(IC = 10 Adc, VCE = 4.0 Vdc)

VBE(on)

5.7

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (2)(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

fT

80

kHz

SmallSignal Current Gain(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

12

72

*Indicates JEDEC Registered Data.NOTES:

1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.2. fT = |hfe| ftest

1.0

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (C)

/PD

(MA

X),

PO

WE

R D

ISS

IPA

TIO

N (

NO

RM

ALI

ZE

D)

0.8

0.6

0.4

0.2

PD

312 Motorola Bipolar Power Transistor Device Data

. . . designed for mediumspeed switching and amplifier applications. These devicesfeature:

Total Switching Time at 3 A typically 1.15 s Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N379192

MAXIMUM RATINGS

Rating

Symbol

2N3715

2N3716

Unit

CollectorEmitter Voltage

VCEO

60

80

Volts

CollectorBase Voltage

VCB

80

100

Volts

EmitterBase Voltage

VEB

7.0

7.0

Volts

Collector Current

IC

10

10

Amps

Base Current

IB

4.0

4.0

Amps

Power Dissipation

PD

150

150

Watts

Thermal Resistance

JC

1.17

1.17

C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

65 to +200

C

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.

140

120

100

80

60

40

0

20

0 25 50 75 100 125 150 175 200

Figure 1. PowerTemperature Derating Curve

TC, CASE TEMPERATURE (C)

P D, P

OW

ER D

ISSI

PATI

ON

(WAT

TS)

160

SEMICONDUCTOR TECHNICAL DATA

Order this documentby 2N3715/D

Motorola, Inc. 1995

10 AMPEREPOWER TRANSISTORS

SILICON NPN6080 VOLTS

150 WATTS

CASE 107TO204AA

(TO3)

REV 7

313Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

EmitterBase Cutoff Current(VEB = 7.0 Vdc) All Types

IEBO

5.0

mAdc

CollectorEmitter Cutoff Current(VCE = 80 Vdc, VBE = 1.5 Vdc) 2N3715(VCE = 100 Vdc, VBE = 1.5 Vdc) 2N3716(VCE = 60 Vdc, VBE = 1.5 Vdc, TC = 150C) 2N3715(VCE = 80 Vdc, VBE = 1.5 Vdc, TC = 150C) 2N3716

ICEX

1.01.01010

mAdc

CollectorEmitter Sustaining Voltage (1)(IC = 200 mAdc, IB = 0) 2N3715

2N3716

VCEO(sus)*

6080

Vdc

DC Current Gain (1)(IC = 1.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716(IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716

hFE*

5030

150

CollectorEmitter Saturation Voltage (1)(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

VCE(sat)*

0.8

Vdc

BaseEmitter Saturation Voltage (1)(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

VBE(sat)*

1.5

Vdc

BaseEmitter Voltage (1)(IC = 3.0 Adc, VCE = 2.0 Vdc) All Types

VBE*

1.5

Vdc

Small Signal Current Gain(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) All Types

hfe

4.0

Switching Times (Figure 2)

Typ

s

(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)Rise TimeStorage TimeFall Time

trtstf

0.450.30.4

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

1.5

0.1

Figure 2. Typical Switching Times

IC, COLLECTOR CURRENT (AMPS)

1.0

0.7

0.5

0.3

0.2

0.10.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

SWIT

CH

ING

TIM

ES (

s)

ts

tf

tr

IB1 = IB2

+11.5 Vton ~ 30 s

9 V

TEST CIRCUIT

~ 4.8 ms

WAVE SHAPEAT POINT A

IC = 5 A, IB1 = IB2 = 0.5 Af 150 cps DUTY CYCLE 2%

+ 30 V

6 4 W

900

100

4 V

900

100 1 W

20 1 WA

Hg RELAYS

+ 62 V 9 V100

toff~ 1.7 ms

A

A

2SC5199

2004-07-07 1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5199 Power Amplifier Applications High breakdown voltage: VCEO = 160 V (min) Complementary to 2SA1942 Suitable for use in 80-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 160 V

Collector-emitter voltage VCEO 160 V

Emitter-base voltage VEBO 5 V

Collector current IC 12 A

Base current IB 1.2 A

Collector power dissipation

(Tc = 25C) PC 120 W

Junction temperature Tj 150 C

Storage temperature range Tstg 55 to 150 C

Electrical Characteristics (Tc = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 160 V, IE = 0 5.0 A

Emitter cut-off current IEBO VEB = 5 V, IC = 0 5.0 A

Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 160 V

hFE (1) (Note)

VCE = 5 V, IC = 1 A 55 160 DC current gain

hFE (2) VCE = 5 V, IC = 6 A 35 74

Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A 0.35 2.5 V

Base-emitter voltage VBE VCE = 5 V, IC = 6 A 1.0 1.5 V

Transition frequency fT VCE = 5 V, IC = 1 A 30 MHz

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 170 pF

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Unit: mm

JEDEC

JEITA

TOSHIBA 2-21F1A

Weight: 9.75 g (typ.)

A

A

Complementary SiliconHigh-Power Transistors

. . . PowerBase complementary transistors designed for highpower audio, stepping motor and other linear applications. Thesedevices can also be used in power switching circuits such as relay orsolenoid drivers, dctodc converters, inverters, or for inductive loadsrequiring higher safe operating area than the 2N3055.

CurrentGain BandwidthProduct @ IC = 1.0 AdcfT = 0.8 MHz (Min) NPN

= 2.2 MHz (Min) PNP Safe Operating Area Rated to 60 V and 120 V, Respectively

*MAXIMUM RATINGS

Rating

Symbol

2N3055A

MJ15015MJ15016

Unit

CollectorEmitter Voltage

VCEO

60

120

Vdc

CollectorBase Voltage

VCBO

100

200

Vdc

CollectorEmitter Voltage BaseReversed Biased

VCEV

100

200

Vdc

EmitterBase Voltage

VEBO

7.0

Vdc

Collector Current Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation @ TC = 25CDerate above 25C

PD

1150.65

1801.03

WattsW/C

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to +200

C

THERMAL CHARACTERISTICSCharacteristic

Symbol

Max

Max

Unit

Thermal Resistance, Junction to Case

RJC

1.52

0.98

C/W

*Indicates JEDEC Registered Data. (2N3055A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

Semiconductor Components Industries, LLC, 2001May, 2001 Rev. 4

1 Publication Order Number:2N3055A/D

2N3055A

MJ15015

MJ15016

*ON Semiconductor Preferred Device

15 AMPERECOMPLEMENTARY

SILICONPOWER TRANSISTORS

60, 120 VOLTS115, 180 WATTS

CASE 107TO204AA

(TO3)

*

*

NPN

PNP

2N3055A MJ15015 MJ15016

http://onsemi.com3

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

UnitOFF CHARACTERISTICS (1)

*CollectorEmitter Sustaining Voltage 2N3055A(IC = 200 mAdc, IB = 0) MJ15015, MJ15016

VCEO(sus)

60120

Vdc

Collector Cutoff Current(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016

ICEO

0.70.1

mAdc

*Collector Cutoff Current 2N3055A(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016

ICEV

5.01.0

mAdc

Collector Cutoff Current(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A

TC = 150C) MJ15015, MJ15016

ICEV

306.0

mAdc

Emitter Cutoff Current 2N3055A(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016

IEBO

5.00.2

mAdc

*SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased(t = 0.5 s nonrepetitive) 2N3055A

(VCE = 60 Vdc) MJ15015, MJ15016

IS/b

1.953.0

Adc

*ON CHARACTERISTICS (1)

DC Current Gain(IC = 4.0 Adc, VCE = 2.0 Vdc)(IC = 4.0 Adc, VCE = 4.0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

10205.0

7070

CollectorEmitter Saturation Voltage(IC = 4.0 Adc, IB = 400 mAdc)(IC = 10 Adc, IB = 3.3 Adc)(IC = 15 Adc, IB = 7.0 Adc)

VCE(sat)

1.13.05.0

Vdc

BaseEmitter On Voltage(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

0.7

1.8

Vdc

*DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product 2N3055A, MJ15015(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016

fT

0.82.2

6.018

MHz

Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

60

600

pF

*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD

Delay Time

td

0.5

s

Rise Time

(VCC = 30 Vdc, IC = 4.0 Adc,IB1 = IB2 = 0 4 Adc

tr

4.0

s

Storage Time

IB1 = IB2 = 0.4 Adc,tp = 25 s Duty Cycle 2%

ts

3.0

s

Fall Time

y y

tf

6.0

s

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.*Indicates JEDEC Registered Data. (2N3055A)

Semiconductor Components Industries, LLC, 2005October, 2005 Rev. 9

1 Publication Order Number:MJL3281A/D

MJL3281A (NPN) MJL1302A (PNP)

Preferred Devices

Complementary BipolarPower Transistors

Features Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency PbFree Packages are AvailableBenefits Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier BandwithApplications HighEnd Consumer Audio Products

Home AmplifiersHome Receivers

Professional Audio AmplifiersTheater and Stadium Sound SystemsPublic Address Systems (PAs)

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating Symbol Value Unit

CollectorEmitter Voltage VCEO 260 Vdc

CollectorBase Voltage VCBO 260 Vdc

EmitterBase Voltage VEBO 5.0 Vdc

CollectorEmitter Voltage 1.5 V VCEX 260 Vdc

Collector Current Continuous Peak (Note 1)

IC 1525

Adc

Base Current Continuous IB 1.5 Adc

Total Power Dissipation @ TC = 25CDerate Above 25C

PD 2001.43

WattsW/C

Operating and Storage JunctionTemperature Range

TJ, Tstg 65 to+150

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase RJC 0.625 C/W

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

MJLxxxxAAYYWWG

Device Package Shipping

ORDERING INFORMATION

MJL3281A TO264

TO264CASE 340G

STYLE 2

25 Units/Rail

21

15 AMPERESCOMPLEMENTARYSILICON POWERTRANSISTORS

260 VOLTS200 WATTS

3

MARKING DIAGRAM

xxxx = 3281 or 1302A = Location CodeYY = YearWW = Work WeekG = PbFree Package

Preferred devices are recommended choices for future useand best overall value.

MJL1302A TO264 25 Units/Rail

1BASE

2 COLLECTOR

3EMITTER

http://onsemi.com

MJL3281AG TO264(PbFree)

25 Units/Rail

MJL1302AG TO264(PbFree)

25 Units/Rail

MJL3281A (NPN) MJL1302A (PNP)

http://onsemi.com2

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage(IC = 100 mAdc, IB = 0)

VCEO(sus)260

Vdc

Collector Cutoff Current(VCB = 260 Vdc, IE = 0)

ICBO 50

Adc

Emitter Cutoff Current(VEB = 5 Vdc, IC = 0)

IEBO 5

Adc

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased(VCE = 50 Vdc, t = 1 s (nonrepetitive)(VCE = 100 Vdc, t = 1 s (nonrepetitive)

IS/b41

Adc

ON CHARACTERISTICS

DC Current Gain(IC = 500 mAdc, VCE = 5 Vdc)(IC = 1 Adc, VCE = 5 Vdc)(IC = 3 Adc, VCE = 5 Vdc)(IC = 5 Adc, VCE = 5 Vdc)(IC = 8 Adc, VCE = 5 Vdc)

hFE7575757545

150150150150

CollectorEmitter Saturation Voltage(IC = 10 Adc, IB = 1 Adc)

VCE(sat) 3

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

fT30

MHz

Output Capacitance(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob 600

pF